NAE, Millennium Technology Prize Recipient
Nobel Prize in Physics
CREE Professor, Materials
Widely recognized as pioneer in light emitters based on wide-bandgap semiconductors, Nakamura continues to focus on development of GaN thin film technology. Additional activities are directed towards growth of bulk GaN crystals with low defect density, for use as substrates in GaN-based devices such as LEDs, high brightness lasers and high-frequency, high-power transistors.