Steven P. DenBaars

Materials Department, UCSB
Santa Barbara, CA 93106


Dr. Steven P. DenBaars is an Professor of Materials and Co-Director of the Solid-State Lighting Center at the University of California Santa Barbara. From 1988-1991 Prof. DenBaars was a member of the technical staff at Hewlett-Packard's Opkoelectroncis Division involved in the growth and fabrication of visible LEDs. Specific research interests include growth of wide-bandgap semiconductors (GaN based), and their application to Blue LEDs and lasers and high power electronic devices. This research has lead to the first US university demonstration of a Blue GaN laser diode and over 7 patents pending on GaN growth and processing. In 1994 he received a NSF Young Investigator award. He has Authored or Co-Authored over 431 technical publications, 150 conference presentation, and 14 patents.


  • University of Southern California, Los Angeles, California Ph.D. degree, December 1988, Department of Electrical Engineering
  • University of Southern California, Los Angeles, California M.S. degree, June 1986, Department of Materials Science (graduated with Honors)
  • University of Arizona, Tuczon, Arizona B.S. degree, 1984, Materials and Metallurgical Engineering (graduated with Highest Distinction) Valedictorian
  • Electronic Materials growth and fabrication of new semiconductor devices.
  • MOCVD of III-V compound semiconductor materials and devices (InP, GaN).
  • Special interests include the effect of materials properties on device performance Blue LEDs, Blue Lasers, and High Temperature, High Power Electronic Devices.
  • Professor, 1998, Materials and ECE Departments
  • Associate Professor, Materials Department, 1994-1998
  • Assistant Professor, UCSB , Materials Dept., 1991-94
  • Hewlett-Packard Optoelectronics, Member Technical Staff, San Jose, CA1988-91
  • Research Assistant, USC Compound Semiconductor Laboratory, 1984-88
  • Best Paper Award, Electronic Materials Conference 1987
  • NSF Young Investigator Award 1994-99
  • VBL Visiting Professor Fellowship, Nagoya University 1996
  • Co-Organizer, Fall MRS Symposium on GaN Materials, 1997
  • Chairman, LEOS Topical Conference on Gallium Nitride 1997
  • Co-Founder, Nitres Inc. 1997
  • Young Scientist Award, Intl. Symposium on Compound Semiconductors 1998
  • Scientific Advisor, Cree Lighting Co. 2000-present
  • Chairman, MOVPE Conference 2004

    (Authored or Co-Authored over 431 technical publications, 150 conference presentation, and 14 patents.)

    1. Craven MD, Lim SH, Wu F, Speck JS, DenBaars SP. "Threading dislocation reduction via laterally overgrown nonpolar" (1120) a-plane GaN. [Journal Paper] Applied Physics Letters, vol.81, no.7, 12 Aug. 2002, pp.1201-3. Publisher: AIP, USA.

    2. Heikman S, Keller S, DenBaars SP, Mishra UK. "Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition." [Journal Paper] Applied Physics Letters, vol.81, no.3, 15 July 2002, pp.439-41. Publisher: AIP, USA.

    3. Skogen EJ, Barton JS, DenBaars SP, Coldren LA. "Tunable sampled-grating DBR lasers using quantum-well intermixing." [Journal Paper] IEEE Photonics Technology Letters, vol.14, no.9, Sept. 2002, pp.1243-5. Publisher: IEEE, USA.

    4. DenBaars SP, Abare AC, Mack MP, Hansen M, Sink RK, Kozodoy P, Keller S, Speck JS, Bowers JE, Mishra UK, Coldren LA. "Blue InGaN MQW laser diodes on sapphire." [Conference Paper] Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243). IEEE. Part vol.2, 1998, pp.346-7 vol.2. Piscataway, NJ, USA.

    5. Denbaars SP. "Gallium nitride based semiconductors for short wavelength optoelectronics." [Journal Paper] International Journal of High Speed Electronics, vol.8, no.2, June 1997, pp.265-82. Publisher: World Scientific, Singapore