The Wide Band-Gap center at the University of California, Santa Barbara provides a focal point for the broad variety of research in nitride and related semiconductors. The center is based on the broad experience and expertise at UCSB in wide band-gap materials growth, characterization, and device design, processing and development.
The center was formed in summer of 1998 to foster interaction between the different research groups and promote a collaborative research atmosphere. The center also provides a means of disseminating and gathering information on wide band-gaps to researchers at UCSB, other universities, national laboratories, and industry.
For further information:
please call 805-893-8462